The MRO-accompanied modes of Re-implantation into SiO2-host matrix: XPS and DFT based scenarios

The following scenarios of Re-embedding into SiO2-host by pulsed Re-implantation were derived and discussed after XPS-and-DFT electronic structure qualification: (i) low Re-impurity concentration mode -> the formation of combined substitutional and interstitial impurities with Re2O7-like atomic and electronic structures in the vicinity of oxygen vacancies; (ii) high Re-impurity concentration mode -> the fabrication of interstitial Re-metal clusters with the accompanied formation of ReO2-like atomic structures and (iii) an intermediate transient mode with Re-impurity concentration increase, when the precursors of interstitial defect clusters are appeared and growing in the host-matrix structure occur. An amplification regime of Re-metal contribution majority to the final Valence Band structure was found as one of the sequences of intermediate transient mode. It was shown that most of the qualified and discussed modes were accompanied by the MRO (middle range ordering) distortions in the initial oxygen subnetwork of the a-SiO2 host-matrix because of the appeared mixed defect configurations.Comment: 19 pages, 7 figures, accepted to J. Alloys and Compound

Finite size and intrinsic field effect on the polar-active properties of the ferroelectric-semiconductor heterostructures

Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium distributions of electric field, polarization and space charge in the ferroelectric-semiconductor heterostructures containing proper or incipient ferroelectric thin films. The role of the polarization gradient and intrinsic surface energy, interface dipoles and free charges on polarization dynamics are specifically explored. The intrinsic field effects, which originated at the ferroelectric-semiconductor interface, lead to the surface band bending and result into the formation of depletion space-charge layer near the semiconductor surface. During the local polarization reversal (caused by the inhomogeneous electric field induced by the nanosized tip of the Scanning Probe Microscope (SPM) probe) the thickness and charge of the interface layer drastically changes, it particular the sign of the screening carriers is determined by the polarization direction. Obtained analytical solutions could be extended to analyze polarization-mediated electronic transport.Comment: 35 pages, 12 figures, 1 table, 2 appendices, to be submitted to Phys. Rev.

Polarization reversal induced by heating-cooling cycles in MgO doped lithium niobate crystals

Polarization reversal during heating-cooling cycles was investigated in MgO doped lithium niobate (MgO:LN) crystal using piezoresponse force microscopy. The essential dependence of the domain structure evolution scenario on the maximal temperature in the cycle has been revealed experimentally. It has been shown that the heating of the engineered domain matrix from room temperature to 85 °C leads to light size reduction of the isolated domains at the matrix edges, whereas the heating to 170 °C leads to essential reduction of the domain size. The opposite strong effect of the domain formation and growth during cooling after pulse heating have been revealed in single domain MgO:LN. The simulation of the time dependence of the pyroelectric field during heating-cooling cycle allowed to reveal the temperature hysteresis and to explain all observed effects taking into account the temperature dependence of the bulk conductivity. © 2013 AIP Publishing LLC

Low loss optical waveguides fabricated in LiTaO3 by swift heavy ion irradiation

© 2019 Optical Society of America. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reservedOptical waveguides are fabricated by irradiation of LiTaO 3 with a variety of swift heavy ions that provide increasing levels of both nuclear and electronic damage rates, including C, F and Si ions, in the energy range of 15-40 MeV. A systematic study of the role of the ion fluence has been carried out in the broad range of 1e13-2e15 at/cm 2 . The kinetics of damage is initially of nuclear origin for the lowest fluences and stopping powers and, then, is enhanced by the electronic excitation (for F and Si ions) in synergy with the nuclear damage. Applying suitable annealing treatments, optical propagation losses values as low as 0.1 dB have been achieved. The damage rates found in LiTaO 3 have been compared with those known for the reference LiNbO 3 and discussed in the context of the thermal spike modelV. Tormo-Márquez thanks the CMAM-UAM for their financial support. We thank the Technical staff of the CMAM-UAM center for support with the ion irradiation

Domain diversity and polarization switching in amino acid β-glycine

Piezoelectric materials based on lead zirconate titanate are widely used in sensors and actuators. However, their application is limited because of high processing temperature, brittleness, lack of conformal deposition and, more importantly, intrinsic incompatibility with biological environments. Recent studies on bioorganic piezoelectrics have demonstrated their potential in these applications, essentially due to using the same building blocks as those used by nature. In this work, we used piezoresponse force microscopy (PFM) to study the domain structures and polarization reversal in the smallest amino acid glycine, which recently attracted a lot of attention due to its strong shear piezoelectric activity. In this uniaxial ferroelectric, a diverse domain structure that includes both 180° and charged domain walls was observed, as well as domain wall kinks related to peculiar growth and crystallographic structure of this material. Local polarization switching was studied by applying a bias voltage to the PFM tip, and the possibility to control the resulting domain structure was demonstrated. This study has shown that the as-grown domain structure and changes in the electric field in glycine are qualitatively similar to those found in the uniaxial inorganic ferroelectrics. © 2019 by the authors

Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell

Plasmonic terahertz detection by a double-grating gate field-effect transistor structure with an asymmetric unit cell is studied theoretically. Detection responsivity exceeding 8 kV/W at room temperature in the photovoltaic response mode is predicted for strong asymmetry of the structure unit cell. This value of the responsivity is an order of magnitude greater than reported previously for the other types of uncooled plasmonic terahertz detectors. Such enormous responsivity can be obtained without using any supplementary antenna elements because the double-grating gate acts as an aerial matched antenna that effectively couples the incoming terahertz radiation to plasma oscillations in the structure channel.Comment: Submitted to APL, 8 pages, 2 figure

Static conductivity of charged domain wall in uniaxial ferroelectric-semiconductors

Using Landau-Ginzburg-Devonshire theory we calculated numerically the static conductivity of both inclined and counter domain walls in the uniaxial ferroelectrics-semiconductors of n-type. We used the effective mass approximation for the electron and holes density of states, which is valid at arbitrary distance from the domain wall. Due to the electrons accumulation, the static conductivity drastically increases at the inclined head-to-head wall by 1 order of magnitude for small incline angles theta pi/40 by up 3 orders of magnitude for the counter domain wall (theta=pi/2). Two separate regions of the space charge accumulation exist across an inclined tail-to-tail wall: the thin region in the immediate vicinity of the wall with accumulated mobile holes and the much wider region with ionized donors. The conductivity across the tail-to-tail wall is at least an order of magnitude smaller than the one of the head-to-head wall due to the low mobility of holes, which are improper carries. The results are in qualitative agreement with recent experimental data for LiNbO3 doped with MgO.Comment: 20 pages, 6 figures, 1 appendi

Morphological Criteria for Diagnosis of Pulmonary Lesions of Lungs in Tumors Based on Resection Material

Morphological criteria of diagnosis of dust lesions of lungs in tumors on resectionmaterial are considered in the article. It is shown that the complex application of various research methods allows the identification of dust particles in the lung and lymph node tissues, and contributes to the improvement of the diagnosis of dust lesions of the respiratory system. Morphological characteristics of bauxite pneumoconiosis in primary lung cancer on resection material are presented

Sizes and fluorescence of cadmium sulfide quantum dots

Cadmium sulfide quantum dots have been synthesized by wet chemical deposition from an aqueous solution. The sizes of the quantum dots determined by dynamic light scattering directly in the colloidal solution and by intermittent-contact atomic force microscopy in the dry sediment agree with each other. It has been found that splitting of the fluorescence peaks of the quantum dots can be affected by the disorder of the atomic structure of cadmium sulfide quantum dots. © 2013 Pleiades Publishing, Ltd